硒化鋅加入氧後會產生明顯的能帶彎曲現象，因此改變氧含量可有效調變氧硒化鋅材料的能隙。這項特性使它在光電元件的應用上相當有潛力，例如將氧硒化鋅材料成長於傳統三層堆疊太陽能池上，成為四層堆疊太陽能電池，可以增加吸收光譜範圍，提升太陽能電池之開路電壓，增加光電轉換效率，對於太陽能電池產業應有很大的助益。然而，氧硒化鋅材料之研究在世界上仍處起步階段，相關文獻甚少。我們先前的經驗顯示，氧硒化鋅必須在特定的成長條件下才能得到良好的結晶品質，而高品質n型與p型硒化鋅亦仍有研究的空間。本計晝將以硒化鋅/氧硒化鋅單接面太陽能電池為載具，開發電漿輔助分子束磊晶技術及元件製程，奠定高效率四接面太陽能電池的基礎 ZnSeO with a large bandgap bowing effect is a potential material for optical devices due to its wide tunable range from ultraviolet to near infrared. Adding a ZnSeO/ZnSe cell on the conventional InGaP/InGaAs/Ge three-junction solar cells is expected to extend the energy absorption range and therefore leads to increased open-circuit voltage and efficiency. To date, the study of ZnSeO is still in its infancy. There have not been many reports on this material. Our previous study indicates that high quality ZnSeO can be obtained only under a specific set of growth conditions. There is also room for n-type and p-type ZnSe to be improved further. The objective of this project is to develop plasma-assisted molecular beam epitaxial growth and device processing technologies of ZnSeO/ZnSe single junction solar cells for the proposed four-junction solar cells. 研究期間：10001 ~ 10012
