隨著對積體電路具更多功能、更高性能及更低成本的要求，能夠操作在低電壓並具有高速傳輸性能的材料及元件已經吸引越來越多的注意。銻化物材料及電晶體同時具有極優異的電子及電洞的傳輸性能及低消耗功率的特性，使其成為近年來受到相當矚目的研究方向之一。此外，考慮到各材料物理特性及製程技術的限制，現今全球半導體產學界都有一個共同的認知，欲將一晶片提高其電晶體的密度並整合更多的功能，其系統架構及製造技術都必須要有新的思維及突破，而異質整合就是一個廣為接受並值得積極發展的方向。本計畫預計利用一年半的時間，利用分子束磊晶技術著手銻化物N 型及P 型二維電子氣結構磊晶的發展，前半段先發展銻化銦鎵為通道層、後半段則以砷銻化銦為通道層之結構。緩衝層磊晶的最佳化、應變工程的應用及砷銻化銦材料的發展為主要的工作重點，目標為了解銻化物異質材料之磊晶成長機制，發展出高品質之元件磊晶。在接下來的一年半，主要為發展異質材料的整合平台，並利用元件製作及特性化，以驗證該平台可行性。堆疊式的元件結構及圖案化的磊晶基板為本計畫採用的主要方法，選擇應用之實例包括整合P 型銻化銦鎵及N 型砷銻化銦之異質接面場效電晶體於同一晶片上，作為未來互補式電路元件發展之基礎；第二實例為結合銻化銦鎵異質接面場效電晶體及磷化銦基異質接面雙極性電晶體，藉由不同材料系統、不同元件之間的整合，進一步評估該整合平台的可靠性。本計劃除了上述之目標外，將就一些關鍵的技術作深入的學術研究。 Materials and devices for high-frequency and low-power applications attract significant attention while increased functions and performances but reduced costs in integrated circuits are demanding. Antimonide-based transistors have properties of superior carrier velocity and low power consumption and, thus, become one of the emerging research directions in recent years. Furthermore, considering limitations of physical properties of semiconductor materials and bottlenecks of IC fabrication techniques, new approaches for enhancing device density and functions on a single wafer need to be developed. Heterogeneous integration is a widely accepted method to achieve the purposes and chosen as our working directions in this project. Molecular beam epiatxy technique is used to develop the epitaxies of N-and P-channel 2-dimensional electron and hole gases in first-half period of the project. InGaSb and InAsSb are selected as channel materials. Optimization of buffer layers, effect of strain on carrier transport property, and development of InAsSb materials are major three working directions, targeting understanding of growth mechanism and development of high-quality antimonide epitaxy materials. In second-half period of the project, we start to develop heterogeneous integration platforms, which are epitaxy substrates including two or above epiatxy structures for different device applications. Fabricating devices on the epitaxy substrates and comparing device characteristics with those on a non-heterogeneous integration platform, effectiveness of the proposed heterogeneous integration platforms can be verified. Stacked epitaxy structures and patterned epitaxy substrates are major two approaches in the project. Our practices that will be used to verify the heterogeneous integration platforms include two devices of antimonide-based P- and N-channel HFETs and two devices of an antimonide-based HFET and an InP-based HBT on a single wafer, respectively. Realizing integration of different materials system and devices on a single wafer, reliability of the heterogeneous integration platforms can therefore be demonstrated. In addition to the above working directions and targets proposed at each stage, we will implement academic studies to some key technologies in the project. 研究期間：10008 ~ 10107
