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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49855

    Title: Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces
    Authors: Tseng,HW;Lu,CT;Hsiao,YH;Liao,PL;Chuang,YC;Chung,TY;Liu,CY
    Contributors: 化學工程與材料工程學系
    Date: 2010
    Issue Date: 2012-03-27 16:24:46 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Various EM-induced failures were observed at a current-stressed Cu/Sn/Cu flip-chip solder joint. At the cathode interface, EM-induced Cu-pad consumption occurred at the current-entry point (maximum current-density) and voiding occurred at the other joint corner away from the current-entry point (minimum current-density). At the anode interface, EM-enhanced Kirkendall voids coalesced into a gap at the Cu(3)Sn/Cu interface near the current-exit corner. We believe that the above various EM-induced failure modes were resulted from different current-stressing densities at the joint interfaces. (C) 2010 Elsevier Ltd. All rights reserved.
    Appears in Collections:[化學工程與材料工程學系 ] 期刊論文

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