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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49856


    Title: Enhanced growth of low-resistivity titanium silicides on epitaxial Si(0.7)Ge(0.3) on (001)Si with a sacrificial amorphous Si interlayer
    Authors: Wu,WW;Wang,CW;Chen,KN;Cheng,SL;Lee,SW
    Contributors: 化學工程與材料工程學系
    Keywords: POLYCRYSTALLINE SILICON;COSI2;TISI2;STABILITY;GERMANIUM;LAYER;FILM
    Date: 2010
    Issue Date: 2012-03-27 16:24:48 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si(0.7)Ge(0.3) with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi(2) on Si(0.7)Ge(0.3) grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2010 Published by Elsevier B.V.
    Relation: THIN SOLID FILMS
    Appears in Collections:[化學工程與材料工程學系 ] 期刊論文

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