Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si(0.7)Ge(0.3) with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi(2) on Si(0.7)Ge(0.3) grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2010 Published by Elsevier B.V.
