Enhanced growth of low-resistivity titanium silicides on epitaxial Si(0.7)Ge(0.3) on (001)Si with a sacrificial amorphous Si interlayer

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題名:	Enhanced growth of low-resistivity titanium silicides on epitaxial Si(0.7)Ge(0.3) on (001)Si with a sacrificial amorphous Si interlayer
作者:	Wu,WW;Wang,CW;Chen,KN;Cheng,SL;Lee,SW
貢獻者:	化學工程與材料工程學系
關鍵詞:	POLYCRYSTALLINE SILICON;COSI2;TISI2;STABILITY;GERMANIUM;LAYER;FILM
日期:	2010
上傳時間:	2012-03-27 16:24:48 (UTC+8)
出版者:	國立中央大學
摘要:	Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si(0.7)Ge(0.3) with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi(2) on Si(0.7)Ge(0.3) grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2010 Published by Elsevier B.V.
關聯:	THIN SOLID FILMS
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

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