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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49859


    Title: Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate
    Authors: Chen,YJ;Kuo,CH;Tun,CJ;Hsu,SC;Cheng,YJ;Liu,CY
    Contributors: 化學工程與材料工程學系
    Date: 2010
    Issue Date: 2012-03-27 16:24:53 (UTC+8)
    Publisher: 國立中央大學
    Abstract: A pyramidal pattern was produced on a c-plane sapphire substrate by a mask-free etching process. Photoluminescence (PL) results show that a GaN-based light-emitting diode (LED) epilayer grown on the pyramidally patterned sapphire substrate has higher epitaxial quality than that grown on a standard flat c-plane sapphire substrate. When the input current is 350 mA, the average light output power of LED chips on the pyramidally patterned sapphire substrate is 37% larger than that of LED chips on a standard c-plane sapphire substrate. (C) 2010 The Japan Society of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[化學工程與材料工程學系 ] 期刊論文

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