Retardation of electromigration-induced Ni(P) consumption by an electroless Pd insertion layer

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題名:	Retardation of electromigration-induced Ni(P) consumption by an electroless Pd insertion layer
作者:	Lu,CT;Tseng,HW;Chang,CH;Huang,TS;Liu,CY
貢獻者:	化學工程與材料工程學系
關鍵詞:	REACTION-ASSISTED CRYSTALLIZATION;NI-P;METALLIZATION;GROWTH;ALLOY;SN
日期:	2010
上傳時間:	2012-03-27 16:25:54 (UTC+8)
出版者:	國立中央大學
摘要:	In this study, Ni(P) bond pads joined with Sn solder bumps were stressed with a high current density of 10(4) A/cm(2). Serious electromigration-induced Ni(P) consumption and unusual EM-enhanced diffusion of the interfacial Ni(3)Sn(4) compound layer are observed. However the observed EM-induced Ni(P) consumption and EM-enhanced diffusion of the interfacial Ni(3)Sn(4) compound layer can be effectively retarded by introducing an additional electroless Pd layer on the Ni(P) layer. The improvement in EM resistance due to the Pd layer can be attributed to PdSn(4) formation and Pd solutes in the interfacial Ni(3)Sn(4) layer. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3449119]
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

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