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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49936


    Title: Electrode dependence of filament formation in HfO(2) resistive-switching memory
    Authors: Lin,KL;Hou,TH;Shieh,J;Lin,JH;Chou,CT;Lee,YJ
    Contributors: 化學工程與材料工程學系
    Keywords: DIFFUSION;BIPOLAR;SIO2
    Date: 2011
    Issue Date: 2012-03-27 16:26:55 (UTC+8)
    Publisher: 國立中央大學
    Abstract: This study investigates bipolar and nonpolar resistive-switching of HfO(2) with various metal electrodes. Supported by convincing physical and electrical evidence, it is our contention that the composition of conducting filaments in HfO(2) strongly depends upon the metal electrodes. Nonpolar resistive-switching with the Ni electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. Conversely, oxygen-deficient filaments induced by anion migration are responsible for bipolar resistive-switching. It was also found that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching power, cycling variations, and retention at elevated temperatures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567915]
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[化學工程與材料工程學系 ] 期刊論文

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