English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 78818/78818 (100%)
造訪人次 : 34721066      線上人數 : 1459
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/49936


    題名: Electrode dependence of filament formation in HfO(2) resistive-switching memory
    作者: Lin,KL;Hou,TH;Shieh,J;Lin,JH;Chou,CT;Lee,YJ
    貢獻者: 化學工程與材料工程學系
    關鍵詞: DIFFUSION;BIPOLAR;SIO2
    日期: 2011
    上傳時間: 2012-03-27 16:26:55 (UTC+8)
    出版者: 國立中央大學
    摘要: This study investigates bipolar and nonpolar resistive-switching of HfO(2) with various metal electrodes. Supported by convincing physical and electrical evidence, it is our contention that the composition of conducting filaments in HfO(2) strongly depends upon the metal electrodes. Nonpolar resistive-switching with the Ni electrode is attributed to the migration of metal cations and the corresponding electrochemical metallization. Conversely, oxygen-deficient filaments induced by anion migration are responsible for bipolar resistive-switching. It was also found that the characteristic nature of the conducting filaments influences many aspects of switching characteristics, including the switching power, cycling variations, and retention at elevated temperatures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567915]
    關聯: JOURNAL OF APPLIED PHYSICS
    顯示於類別:[化學工程與材料工程學系 ] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML596檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明