C Redistribution during Ni Silicide Formation on Si(1-y)C(y) Epitaxial Layers

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题名:	C Redistribution during Ni Silicide Formation on Si(1-y)C(y) Epitaxial Layers
作者:	Lee,SW;Huang,SS;Hsu,HC;Nieh,CW;Tsai,WC;Lo,CP;Lai,CH;Tsai,PY;Wang,MY;Wu,CM;Lei,MD
贡献者:	材料科學與工程研究所
日期:	2010
上传时间:	2012-03-27 16:28:01 (UTC+8)
出版者:	國立中央大學
摘要:	This study investigates the formation of Ni silicides on Si(1-y)C(y) (0 <= y <= 0.02) epilayers grown on Si(001). The presence of C atoms retards the growth kinetics of NiSi and significantly enhances the thermal stability of NiSi thin films. In particular, an abnormal redistribution of C atoms in the NiSi thin films was observed during Ni silicidation. The NiSi layer was split into two sublayers by an obvious pileup of C atoms. This study proposes a mechanism to elucidate this phenomenon in terms of the C solubility. C atoms accumulated at the NiSi/Si(1-y)C(y) interfaces and NiSi grain boundaries may act as diffusion barriers, effectively hindering the grain growth and agglomeration of NiSi and extending the process window of low resistivity NiSi silicides.
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
显示于类别:	[材料科學與工程研究所 ] 期刊論文

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