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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49995

    Title: Hexagonal SiGe quantum dots and nanorings on Si(110)
    Authors: Lee,CH;Liu,CW;Chang,HT;Lee,SW
    Contributors: 材料科學與工程研究所
    Date: 2010
    Issue Date: 2012-03-27 16:28:27 (UTC+8)
    Publisher: 國立中央大學
    Abstract: The hexagonal shapes of Si(0.13)Ge(0.87) quantum dots (QDs) and rings on Si(110) reflect the lattice symmetry of the top two Si layers on Si, which is different from that on Si(100). The formation time of nanorings on Si(110) is much longer than that on Si(100). This is probably due to the slow diffusion of Ge and Si on Si(110) substrate. Based on both transmission electron microscopy and Raman spectroscopy, the formation of SiGe nanorings can be attributed to Ge outdiffusion from the top of the central SiGe QDs during in situ annealing. Moreover, the Si cap layer is essential for nanorings formation. The uncapped QDs cannot transform into rings even after a long time annealing. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3309773]
    Appears in Collections:[材料科學與工程研究所 ] 期刊論文

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