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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/49995


    題名: Hexagonal SiGe quantum dots and nanorings on Si(110)
    作者: Lee,CH;Liu,CW;Chang,HT;Lee,SW
    貢獻者: 材料科學與工程研究所
    日期: 2010
    上傳時間: 2012-03-27 16:28:27 (UTC+8)
    出版者: 國立中央大學
    摘要: The hexagonal shapes of Si(0.13)Ge(0.87) quantum dots (QDs) and rings on Si(110) reflect the lattice symmetry of the top two Si layers on Si, which is different from that on Si(100). The formation time of nanorings on Si(110) is much longer than that on Si(100). This is probably due to the slow diffusion of Ge and Si on Si(110) substrate. Based on both transmission electron microscopy and Raman spectroscopy, the formation of SiGe nanorings can be attributed to Ge outdiffusion from the top of the central SiGe QDs during in situ annealing. Moreover, the Si cap layer is essential for nanorings formation. The uncapped QDs cannot transform into rings even after a long time annealing. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3309773]
    關聯: JOURNAL OF APPLIED PHYSICS
    顯示於類別:[材料科學與工程研究所 ] 期刊論文

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