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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50223


    Title: Effects of the hydrogen content on the development of anodic aluminum oxide film on pure aluminum
    Authors: Shih,TS;Chen,PC;Huang,YS
    Contributors: 機械工程學系
    Keywords: HIGH-PURITY ALUMINUM;STRESS GENERATION;BARRIER LAYER;GROWTH;XPS;ANODIZATION;MECHANISM;TITANIUM;BEHAVIOR;ALLOYS
    Date: 2011
    Issue Date: 2012-03-27 17:06:54 (UTC+8)
    Publisher: 國立中央大學
    Abstract: In this study, high purity aluminum (Al) samples containing different levels of hydrogen were used as a base metal for anodization. To ensure constant current densities during the experiments, the voltage-time (V-t) curves were recorded. The differential Delta V/Delta t curves were plotted and the energy consumed during different steps of anodization was calculated. Experimental observations show that differences in the hydrogen content affected the amount of energy consumed. The process was divided into three steps. When the voltage response at the end of step 2 exceeded 25 V, the energy consumed in steps 2 + 3 reached or exceeded 7.4 J/cm(2), and the pore channels branched or merged, creating a spike in the Delta V/Delta t curves in step 3. A combination of the effects of the high voltage response at the end of step 2 and the high hydrogen content in the Al samples led to the formation of an anodic aluminum oxide (MO) film in the sulfuric acid solution, which produced crystallized boehmite. This study proposes a unique tool for understanding certain special anodic behaviors of pure Al, wherein the branching or merging of pore channels and the partial crystallization of the AAO film can be ascertained by looking at the irregularities in the Delta V/Delta t curves obtained in step 3. (C) 2011 Elsevier B.V. All rights reserved.
    Relation: THIN SOLID FILMS
    Appears in Collections:[機械工程學系] 期刊論文

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