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    題名: Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films
    作者: Yen,CY;Jian,SR;Chen,GJ;Lin,CM;Lee,HY;Ke,WC;Liao,YY;Yang,PF;Wang,CT;Lai,YS;Jang,JSC;Juang,JY
    貢獻者: 機械工程學系
    關鍵詞: CATALYST-FREE SYNTHESIS;NANOINDENTATION;NANOWIRES;SAPPHIRE;EPITAXY
    日期: 2011
    上傳時間: 2012-03-27 17:07:28 (UTC+8)
    出版者: 國立中央大學
    摘要: ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 degrees C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 degrees C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 degrees C and 500 degrees C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation. (C) 2011 Elsevier B. V. All rights reserved.
    關聯: APPLIED SURFACE SCIENCE
    顯示於類別:[機械工程學系] 期刊論文

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