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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50259

    Title: Photoelectrochemical properties of AgInS(2) thin films prepared using electrodeposition
    Authors: Wang,CH;Cheng,KW;Tseng,CJ
    Contributors: 機械工程學系
    Date: 2011
    Issue Date: 2012-03-27 17:07:53 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Ternary silver-indium-sulfide samples were deposited on fluorine-doped tin oxide (FTO) coated glass substrates using a one-step electrodeposition method. A new procedure for the deposition of AgInS(2) samples is reported. The effect of the [Ag]/[In] molar ratio in solution bath on the structural, morphological, and photoelectrochemical properties of samples was examined. X-ray diffraction patterns of samples show that the films are the AgInS(2) phase. The thickness, direct band gap, and indirect band gap of the films were in the ranges 209-1021 nm, 1.82-1.85 eV, and 1.44-1.51 eV, respectively. The carrier densities and flat-band potentials of films obtained from Mott-Schottky and open-circuit potential measurements were in the ranges of 4.2 x 10(19)-9.5 x 10(19) cm(-3) and -0.736 to -0.946 V vs. the normal hydrogen electrode (NHE), respectively. It was found that the samples with molar ratio [Ag]/[In]=0.8 in solution bath had a maximum photocurrent density of 9.28 mA/cm(2) with an applied bias of +1.0 V vs. an Ag/AgCl electrode in contact with electrolyte containing 0.25 M K(2)SO(3) and 0.35 M Na(2)S. The results show that high-quality AgInS(2) films can be deposited on FTO-coated glass substrates for photoelectrochemical (PEC) applications. (C) 2010 Elsevier B.V. All rights reserved.
    Appears in Collections:[機械工程學系] 期刊論文

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