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    题名: Functionalized dithieno[2,3-b:3 ',2 '-d]thiophenes (DTTs) for organic thin-film transistors
    作者: Kim,C;Chen,MC;Chiang,YJ;Guo,YJ;Youn,J;Huang,H;Liang,YJ;Lin,YJ;Huang,YW;Hu,TS;Lee,GH;Facchetti,A;Marks,TJ
    贡献者: 化學學系
    关键词: FIELD-EFFECT TRANSISTORS;N-CHANNEL SEMICONDUCTORS;HIGH-ELECTRON-MOBILITY;HIGH-PERFORMANCE;BUILDING-BLOCKS;FUSED THIOPHENES;TRIFLUOROMETHYLPHENYL GROUPS;DIIMIDE SEMICONDUCTORS;POLYMERIC ELECTRONICS;CARRIER MOBILITY
    日期: 2010
    上传时间: 2012-03-27 18:08:35 (UTC+8)
    出版者: 國立中央大學
    摘要: A series of dithieno[2,3-b:3',2'-d]thiophene (DTT;1) derivatives were synthesized and characterized. Facile, one-pot [2 + 1] and [1 + 1 + 1] synthetic methods of DTT were developed, which enabled the efficient realization of a new DTT-based semiconductor series for organic thin-film transistors (OTFTs). These DTTs are end-functionalized with perfluorophenyl (FP-), perfluorobenzoyl (FB-), benzoyl (B-), 2-naphthylcarbonyl (Np-), 2-benzothiazolyl (BS-), 2-thienylcarbonyl (T-), and 2-(5-hexyl)thienylcarbonyl (HT-) groups. The molecular structures of DFP-DTT (3), DFB-DTT (4), FBB-DTT (5), DB-DTT (6), and DNp-TT (7) were determined via single-crystal X-ray diffraction. Our studies reveal that the majority of these carbonyl-containing derivatives exhibit p-channel transport with hole mobilities of up to 0.01 cm(2)/Vs for DB-DTT and DBS-DTT, while perfluorobenzoyl and perfluorophenyl-substituted compounds exhibit n-channel transport with mobilities up to 0.002 cm(2)/Vs for DFB-DTT, 0.03 cm(2)/Vs for FBB-DTT, and 0.07 cm(2)/Vs for DFP-DTT, rendering the latter the DTT derivative currently having the highest electron mobility in OTFT devices. Within this family, the carrier mobility values are strongly dependent upon the semiconductor growth temperature and the dielectric surface treatment. (C) 2010 Elsevier B. V. All rights reserved.
    關聯: ORGANIC ELECTRONICS
    显示于类别:[化學學系] 期刊論文

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