Novel Semiconductors Based on Functionalized Benzo[d,d ']thieno[3,2-b;4,5-b ']dithiophenes and the Effects of Thin Film Growth Conditions on Organic Field Effect Transistor Performance

NCU Institutional Repository > 理學院 > 化學學系 > 期刊論文 > Item 987654321/50757

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/50757

题名:	Novel Semiconductors Based on Functionalized Benzo[d,d ']thieno[3,2-b;4,5-b ']dithiophenes and the Effects of Thin Film Growth Conditions on Organic Field Effect Transistor Performance
作者:	Youn,J;Chen,MC;Liang,YJ;Huang,H;Ortiz,RP;Kim,C;Stern,C;Hu,TS;Chen,LH;Yan,JY;Facchetti,A;Marks,TJ
贡献者:	化學學系
关键词:	CHARGE-TRANSPORT PARAMETERS;MOLECULAR PACKING;FUSED THIOPHENES;EFFECT MOBILITY;PENTACENE;DERIVATIVES;ELECTRONICS;POLYCRYSTALLINE;STABILITY;CONVENIENT
日期:	2010
上传时间:	2012-03-27 18:09:37 (UTC+8)
出版者:	國立中央大學
摘要:	A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO(2) substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm(2) V(-1) s(-1) and I(on)/I(off) greater than 10(8).
關聯:	CHEMISTRY OF MATERIALS
显示于类别:	[化學學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	519	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....