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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50767


    Title: Origin of high field-effect mobility in solvent-vapor annealed anthradithiophene derivative
    Authors: Wang,CH;Cheng,YC;Su,JW;Fan,LJ;Huang,PY;Chen,MC;Yang,YW
    Contributors: 化學學系
    Keywords: THIN-FILM TRANSISTORS;FUNCTIONALIZED ACENES;CHARGE-TRANSPORT;PERFORMANCE;ORIENTATION;ELECTRONICS;MONOLAYERS;CONTACT;AG(111)
    Date: 2010
    Issue Date: 2012-03-27 18:09:48 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Solvent-vapor annealing was used to increase the field-effect mobility of soluble triethylsilylethynyl anthradithiophene spin-coated on organosilane-terminated silicon dioxide, yielding a high value of 1.2 cm(2) V (1) s (1). The cause of improvement was investigated by atomic force microscopy, X-ray diffraction, and near-edge X-ray absorption fine structure spectroscopy. Vapor annealing exerts little effect on the molecular tilt and the crystallinity normal to the surface, but improves the film morphology significantly, yielding larger grains with perhaps better in-plane crystallinity. (C) 2010 Elsevier B. V. All rights reserved.
    Relation: ORGANIC ELECTRONICS
    Appears in Collections:[Department of Chemistry] journal & Dissertation

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