Polyimide/Ta(2)O(5) nanocomposite gate insulators for enhanced organic thin-film transistor performance

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50913

Title:	Polyimide/Ta(2)O(5) nanocomposite gate insulators for enhanced organic thin-film transistor performance
Authors:	Chen,LH;Lin,P;Ho,JC;Lee,CC;Kim,C;Chen,MC
Contributors:	化學學系
Keywords:	FIELD-EFFECT TRANSISTORS;MOBILITY;TEMPERATURES;MORPHOLOGY;CIRCUITS;SURFACE;VOLTAGE
Date:	2011
Issue Date:	2012-03-27 18:12:47 (UTC+8)
Publisher:	國立中央大學
Abstract:	This study reports the preparation and characterization of polyimide/Ta(2)O(5) nanocomposite films as insulators for organic thin-film transistors (OTFTs). The degree of imidization, thermal, electrical, and surface properties of the nanocomposite films were characterized as a function of Ta(2)O(5) precursor contents. The nanocomposite films, with controlled/comparable insulator electrical characteristics and surface properties, have been found to enhance dielectric constant compared to pristine polyimide films, which resulted in improved pentacene TFT performance by a factor of 2-3 with carrier mobility values as high as 0.38 cm(2)/Vs. (C) 2011 Elsevier B.V. All rights reserved.
Relation:	SYNTHETIC METALS
Appears in Collections:	[Department of Chemistry] journal & Dissertation

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