English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69937/69937 (100%)
Visitors : 23035359      Online Users : 429
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50948

    Title: Infrared interference coating by use of Si(3)N(4) and SiO(2) films with ion-assisted deposition
    Authors: Lee,CC;Ku,SL
    Contributors: 光電科學研究所
    Date: 2010
    Issue Date: 2012-03-27 18:13:29 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Silicon nitride (Si(3)N(4)) and silicon dioxide (SiO(2)) films were prepared by ion-assisted deposition, and a higher deposition rate was achieved for both films. The results of x-ray diffraction and transmission electron microscopy measurements showed that the films have amorphous structures. As measured by infrared (IR) spectrometry and x-ray photoelectron spectrometry, both stoichiometric films have extremely low hydrogen content. The IR optical constants of the films were determined by spectroscopic ellipsometry. Both films exhibited a low extinction coefficient at wavelengths from 2 to 7 mu m. The application of Si(3)N(4) and SiO(2) films on the IR interference coating is demonstrated. (C) 2010 Optical Society of America
    Relation: APPLIED OPTICS
    Appears in Collections:[光電科學研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明