Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50970

Title:	Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template
Authors:	Kuo,CH;Chang,LC;Kuo,CW;Chi,GC
Contributors:	光電科學與工程學系
Date:	2010
Issue Date:	2012-03-27 18:14:13 (UTC+8)
Publisher:	國立中央大學
Abstract:	We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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