In this study, we demonstrated a simple method that can be used to simultaneously modulate the far field pattern and enhance the light extraction of GaN-based light-emitting diodes (LEDs). In this method, microstructures were imprinted on a reliable spin-on-glass surface on top of a transparent conductive layer. The far-field pattern was modulated using microoptical structures, and at the same time, the light extraction was enhanced owing to the small refractive index difference and surface roughness. There was no decrease in the electrical performance of these devices. The peak intensity shifted from 0 to 22A degrees in one-dimensional (1D) asymmetrically blazed periodic structures, and a flattened distribution with a uniform intensity within a span of 110A degrees was observed in two-dimensional (2D) symmetrically periodic structures. This method achieved 13 and 40% light enhancements for 1D and 2D structures, respectively.
