GaN Metal-Semiconductor-Metal Photodetectors Prepared on Nanorod Template

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题名:	GaN Metal-Semiconductor-Metal Photodetectors Prepared on Nanorod Template
作者:	Chang,SJ;Wang,SM;Chang,PC;Kuo,CH;Young,SJ;Chen,TP
贡献者:	光電科學與工程學系
关键词:	SCHOTTKY-BARRIER PHOTODETECTORS;LIGHT-EMITTING-DIODES;CAP LAYER;INGAN-GAN;BUFFER;FILMS
日期:	2010
上传时间:	2012-03-27 18:14:24 (UTC+8)
出版者:	國立中央大學
摘要:	The authors report the fabrication of GaN-based metal-semiconductor-metal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[光電科學與工程學系] 期刊論文

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