GaN Schottky Barrier Photodetectors

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50978

Title:	GaN Schottky Barrier Photodetectors
Authors:	Chang,SJ;Wang,SM;Chang,PC;Kuo,CH;Young,SJ;Chen,TP;Wu,SL;Huang,BR
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;INGAN-GAN;DETECTORS;MECHANISM;EPITAXY;LAYER;BLUE
Date:	2010
Issue Date:	2012-03-27 18:14:26 (UTC+8)
Publisher:	國立中央大學
Abstract:	We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D) were 7.00 x 10(-10) W and 2.26 x 10(9) cmHz(0.5)W(-1), respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D were 3.56 x 10(-6) W and 4.44 x 10(5) cmHz(0.5)W(-1), respectively, for the PD prepared on a conventional sapphire substrate.
Relation:	IEEE SENSORS JOURNAL
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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