GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region

NCU Institutional Repository > 理學院 > 光電科學與工程學系 > 期刊論文 > Item 987654321/50980

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/50980

题名:	GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region
作者:	Chen,PH;Chang,LC;Tsai,CH;Lee,YC;Lai,WC;Wu,ML;Kuo,CH;Sheu,JK
贡献者:	光電科學與工程學系
关键词:	ITO TRANSPARENT CONTACT;NITRIDE-BASED LEDS;EFFICIENCY;LAYER
日期:	2010
上传时间:	2012-03-27 18:14:29 (UTC+8)
出版者:	國立中央大學
摘要:	This study presents the numerical and experimental demonstrations for the enhancement of light extraction efficiency in nitride-based light-emitting diodes (LEDs) with textured side-wall and micro-sized pillar waveguides (TSMPW) and nano-textured sidewall and nano-pillars (NTSNP) around the mesa. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nano-pillars on the mesa-etched regions. It was found that electrical characteristics observed from the proposed LEDs were near the same as the control samples without the pillars. Output power enhancement of LED with TSMPW was about 11% compared with conventional LEDs, and the output power enhancement of LED was greater than 45% upon replacement of TSMPW with the NTSNP structure. The light extraction efficiency enhancement factors of the LEDs with TSMPW and NTSNP structures simulated by finite-difference time-domain analysis were 16.6% and 23%, respectively.
關聯:	IEEE JOURNAL OF QUANTUM ELECTRONICS
显示于类别:	[光電科學與工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	465	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing