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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50992


    Title: Nitride-based blue light-emitting diodes with multiple Mg(x)N(y)/GaN buffer layers
    Authors: Fu,YK;Kuo,CH;Tun,CJ;Chang,LC
    Contributors: 光電科學與工程學系
    Keywords: VAPOR-PHASE EPITAXY;SAPPHIRE SUBSTRATE;NUCLEATION LAYERS;GAN FILMS;MICROSTRUCTURE;LEDS;SCATTERING;GROWTH
    Date: 2010
    Issue Date: 2012-03-27 18:14:51 (UTC+8)
    Publisher: 國立中央大學
    Abstract: GaN epitaxial layers and nitride-based light-emitting diodes (LEDs) structures with a conventional single low-temperature (LT) GaN buffer layer and multiple Mg(x)N(y)/GaN buffer layers were prepared by metalorganic chemical vapor deposition. It was found that crystal quality of the GaN epilayer prepared on multiple Mg(x)N(y)/GaN buffer layers was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the multiple Mg(x)N(y)/GaN buffer layers, it was also found that 20 mA LED output power can be enhanced by 12%, as compared to the conventional LED. Such an enhancement in output power could be attributed to the reduction of threading dislocation induced non-radiative recombination centers using 12-pairs Mg(x)N(y)/GaN buffer layers. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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