Optical and structural properties of SiO(x) films from ion-assisted deposition

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50994

Title:	Optical and structural properties of SiO(x) films from ion-assisted deposition
Authors:	Lee,CC;Ku,SL
Contributors:	光電科學與工程學系
Keywords:	THIN-FILMS;SILICON MONOXIDE;SPECTROSCOPY;NANOPARTICLES;DEPENDENCE;INTERFACES
Date:	2010
Issue Date:	2012-03-27 18:14:55 (UTC+8)
Publisher:	國立中央大學
Abstract:	This study investigates the optical and structural properties of SiO(x) (x similar to 1) films prepared by an ion-assisted deposition (IAD) process. The films were prepared by evaporating silicon monoxide, with and without simultaneous Ar(+) bombardment. The stoichiometry of each film was determined as measured by the infrared spectrometry and X-ray photoelectron spectrometry. The variation in the stoichiometry revealed that the oxygen content of the SiO(x) thin films varied slightly under the different conditions of the Ar(+) bombardment. The results of the X-ray diffraction and transmission electron microscopy (TEM) measurements illustrated that all of the films had amorphous structures. However, a different interfacial appearance between the film and the substrate was observed from the TEM image. The optical constants of the SiO(x) thin films were determined by a spectroscopic ellipsometry. The extinction coefficient of all of the films approached zero in the infrared wavelength range from 2 to 7 mu m, but the refractive index was varied by the IAD process. The variation of these refractive indices is mainly related to the packing density of the films. (C) 2010 Published by Elsevier B.V.
Relation:	THIN SOLID FILMS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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