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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51000

    Title: Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition
    Authors: Lee,CC;Lee,KH;Tang,CJ;Jaing,CC;Chen,HC
    Contributors: 光電科學與工程學系
    Date: 2010
    Issue Date: 2012-03-27 18:15:11 (UTC+8)
    Publisher: 國立中央大學
    Abstract: In this study, we investigate the deposition of SiN(x) thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of N(2) and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of 500 nm) of 3.44 x 10(-4), and deposition rate of 0.166 nm/s. The x-ray photoelectron spectra of SiN(x) films deposited with different beam voltages are also analyzed. The residual stress of the SiN(x) films varied from -1.38 to -2.17 GPa, depending on the beam voltage. The residual stress is reduced from -2.17 to -1.40 GPa when the film is divided into four layers with three interfaces. (C) 2010 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3456708]
    Appears in Collections:[光電科學與工程學系] 期刊論文

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