Surface characterization and properties of silicon nitride films prepared by ion-assisted deposition

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51007

Title:	Surface characterization and properties of silicon nitride films prepared by ion-assisted deposition
Authors:	Ku,SL;Lee,CC
Contributors:	光電科學與工程學系
Keywords:	THIN-FILMS;OPTICAL-PROPERTIES;AMORPHOUS-SILICON;COATINGS;SINX;MICROSTRUCTURE;BOMBARDMENT;CONSTANTS;HARDNESS;PLASMA
Date:	2010
Issue Date:	2012-03-27 18:15:22 (UTC+8)
Publisher:	國立中央大學
Abstract:	Silicon nitride (SiN) films had been prepared at low substrate temperature (100 degrees C) using the ion-assisted deposition (IAD) process. The films had been analyzed by the measurement of X-ray diffraction, atomic force microscopy. Fourier transform infrared spectrometry, nano indenter, and ellipsometry. The effects of N-ion current density on the surface morphology, compositional, mechanical, and infrared optical properties of SiN thin films were investigated. The results showed that the stoichiometric Si(3)N(4) thin film with desirable properties, such as continuous and smooth surface morphology, extremely low hydrogen content, mechanical strong, and low extinction coefficient, could be obtained by using the IAD technique. (C) 2010 Elsevier B.V. All rights reserved.
Relation:	SURFACE & COATINGS TECHNOLOGY
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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