Negative charge material, AlO(x)N(y), has been fabricated to passivate the surface of p-type silicon. The fabrication of AlO(x)N(y) was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 10(11) cm(-2) to 2.26 x 10(12) cm(-2) after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1 x 10(5) to 32 cm/s. (C) 2011 Optical Society of America
