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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51035


    Title: Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlO(x)N(y) thin films
    Authors: Chen,SH;Hsu,CC;Wang,HW;Yeh,CL;Tseng,SZ;Lin,HJ;Lee,CC;Peng,CY
    Contributors: 光電科學與工程學系
    Keywords: SURFACE PASSIVATION
    Date: 2011
    Issue Date: 2012-03-27 18:16:14 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Negative charge material, AlO(x)N(y), has been fabricated to passivate the surface of p-type silicon. The fabrication of AlO(x)N(y) was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 10(11) cm(-2) to 2.26 x 10(12) cm(-2) after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1 x 10(5) to 32 cm/s. (C) 2011 Optical Society of America
    Relation: APPLIED OPTICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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