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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51037

    Title: Influence of hydrogen on the properties of Al and Ga-doped ZnO films at room temperature
    Authors: Li,MC;Kuo,CC;Peng,SH;Chen,SH;Lee,CC
    Contributors: 光電科學與工程學系
    Date: 2011
    Issue Date: 2012-03-27 18:16:17 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Low resistivity and high transmittance of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) transparent conductive thin films have been achieved by use of pulsed dc magnetron sputtering in a hydrogen environment at room temperature. The addition of hydrogen to the sputtering gas can reduce the resistivity of the films and improve their electrical properties compared to those prepared without H(2), because the hydrogen acts a shallow donor. The average transmittance was over 85% in the visible region, and the lowest resistivity of the AZO and GZO films was 4.01 x 10(-4) (Omega-cm) and 4.39 x 10(-4) (Omega-cm), respectively. (C) 2010 Optical Society of America
    Relation: APPLIED OPTICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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