Light extraction enhancement of GaN-based LEDs through passive/active photon recycling

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51040

Title:	Light extraction enhancement of GaN-based LEDs through passive/active photon recycling
Authors:	Sun,CC;Lee,TX;Lo,YC;Chen,CC;Tsai,SY
Contributors:	光電科學與工程學系
Keywords:	EMITTING-DIODES;QUANTUM EFFICIENCY;NEAR-ULTRAVIOLET;SURFACE;SIMULATION;SUBSTRATE;ARRAY
Date:	2011
Issue Date:	2012-03-27 18:16:22 (UTC+8)
Publisher:	國立中央大學
Abstract:	In this paper, we present a study of light extraction of GaN-based LEDs through active/passive photon recycling, including sapphire-based and Thin-GaN based on Monte Carlo ray tracing. The mechanisms in enhancing light extraction incorporated with implanting micro pyramid (lens) array and lens encapsulation of both cavity photon recycling and quantum photon recycling are discussed. For an absorption coefficient of 200 cm(-1) in the active layer, both approaches perform more than 90% of light extraction efficiency through cavity photon recycling. For a heavy absorbed active layer, the quantum photon recycling could play an important role in light extraction. (C) 2011 Elsevier B.V. All rights reserved.
Relation:	OPTICS COMMUNICATIONS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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