Antimonide-based depletion-mode metal-oxide-semiconductor field-effect transistors using small-bandgap InAs channel layers

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题名:	Antimonide-based depletion-mode metal-oxide-semiconductor field-effect transistors using small-bandgap InAs channel layers
作者:	Lin,HK;Liau,GY;Liu,HK
贡献者:	電機工程學系
关键词:	IMPACT IONIZATION;HIGH-PERFORMANCE;TRANSPORT;GAAS
日期:	2010
上传时间:	2012-03-28 10:10:19 (UTC+8)
出版者:	國立中央大學
摘要:	Antimonide-based depletion-mode InAs channel metal-oxide-semiconductor field-effect transistors showing complete pinch-off characteristics are successfully demonstrated. The epitaxial antimonide materials are grown by molecular beam epitaxy and gate dielectrics are deposited by plasma-enhanced chemical vapor deposition. A device with a 2.0 mu m gate length shows a drain current density of 600 mA/mm at V(GS) = 0 V and a peak transconductance of 380 mS/mm at V(DS) = 1.5 V. Charge trapping at the dielectric-semiconductor interface is observed using pulsed ID -V(DS) measurements and is explained as a primary cause for the degradation of frequency performance of the device. c 2010 American Vacuum Society. [DOI: 10.1116/1.3506111]
關聯:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
显示于类别:	[電機工程學系] 期刊論文

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