Broadband and Low-Loss 1:9 Transmission-Line Transformer in 0.18-mu m CMOS Process

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题名:	Broadband and Low-Loss 1:9 Transmission-Line Transformer in 0.18-mu m CMOS Process
作者:	Chiou,HK;Liao,HY
贡献者:	電機工程學系
关键词:	DISTRIBUTED ACTIVE-TRANSFORMER;POWER-AMPLIFIER;DESIGN
日期:	2010
上传时间:	2012-03-28 10:10:24 (UTC+8)
出版者:	國立中央大學
摘要:	This letter proposes a transmission-line transformer (TLT) with high impedance-transformation ratio of 1 : 9 for wideband power amplifier design. The 1 : 9 TLT is realized with broadside-coupled and multiple-metal stacked transmission lines and achieves a broadband impedance transformation from 5.0 +/- 0.1 Omega optimal load impedance of the power cell to 50-Omega load with a bandwidth of 4.4 to 6.6 GHz, which covers the required bandwidth of the IEEE 802.11a WLAN application. The measured minimum insertion loss is 1.07 dB at 5.8 GHz with a 3-dB bandwidth of 164%. This 1 : 9 TLT is fabricated in standard 0.18-mu m CMOS process with a chip area of 426 mu m x 589 mu m including the test pad.
關聯:	IEEE ELECTRON DEVICE LETTERS
显示于类别:	[電機工程學系] 期刊論文

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