E-beam-evaporated Al(2)O(3) for InAs/AlSb metal-oxide-semiconductor HEMT development

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 期刊論文 > Item 987654321/51939

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/51939

題名:	E-beam-evaporated Al(2)O(3) for InAs/AlSb metal-oxide-semiconductor HEMT development
作者:	Lin,HK;Fan,DW;Lin,YC;Chiu,PC;Chien,CY;Li,PW;Chyi,JI;Ko,CH;Kuan,TM;Hsieh,MK;Lee,WC;Wann,CH
貢獻者:	電機工程學系
關鍵詞:	FIELD-EFFECT TRANSISTORS;SURFACE PASSIVATION;HETEROSTRUCTURES;BARRIER
日期:	2010
上傳時間:	2012-03-28 10:11:04 (UTC+8)
出版者:	國立中央大學
摘要:	Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al(2)O(3) between the gate metal and semiconductor surface and successfully demonstrated DC and RF performance of the InAs/AlSb metal-oxide-semiconductor HEMTs (MOS-HEMTs). An MOS-HEMT device with a 2.0 mu m gate length yields DC performance of I(DSS) = 286 mA/mm and G(m) = 495 mS/ mm and RF performance of f(T) = 10.1 GHz and f(MAX) = 19.9 GHz. Compared with a conventional HEMT, gate leakage is reduced by one order and the marked dependence of drain current on gate bias in the deep subthreshold region is largely alleviated. (C) 2010 Elsevier Ltd. All rights reserved.
關聯:	SOLID-STATE ELECTRONICS
顯示於類別:	[電機工程學系] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	504	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing