English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69561/69561 (100%)
Visitors : 23147056      Online Users : 348
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51940


    Title: Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition
    Authors: Lin,HC;Liu,HH;Lee,GY;Chyi,JI;Lu,CM;Chao,CW;Wang,TC;Chang,CJ;Chi,SWS
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:11:06 (UTC+8)
    Publisher: 國立中央大學
    Abstract: The epitaxial growth of GaN on patterned c-plane sapphire substrates having microlenses with a flat top, a dull tip, or a sharp tip is carried out. The growth mode, dislocation density, residual strain, and optical properties of GaN are investigated and correlated with the shape of the microlens. Because the growth of GaN does not take place on top of the microlens with a sharp tip, this type of patterned substrate leads to a wider low dislocation density lateral growth region, while it also gives rise to a higher compressive residual strain in GaN. For GaN grown on the microlens with a dull tip, many dislocations appear, resulting from the extra facets on the lens. It, however, has the lowest compressive strain among the samples studied. This work provides a guideline for preparing microlens patterned sapphire substrates for potential applications in high brightness InGaN light emitting diodes as both dislocation density and strain influence their internal quantum efficiency.
    Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML238View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明