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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51951

    Title: Fully-integrated CMOS class-E power amplifier using broadband and low-loss 1:4 transmission-line transformer
    Authors: Liao,HY;Pan,MW;Chiou,HK
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:11:41 (UTC+8)
    Publisher: 國立中央大學
    Abstract: A broadband and low-loss 1: 4 transmission-line transformer (TLT) fabricated in 0.18 mu m CMOS process is proposed. Using broadside-coupled and multiple-metal stacked transmission lines, the broadband impedance transformation is from 12.2 +/- 0.1 to 50 V within a 1.2 GHz bandwidth from 2.1 to 3.3 GHz, and the minimum insertion loss is 1.0 dB at 2.6 GHz with a 3 dB bandwidth of 180%. In addition, a fully-integrated CMOS class-E power amplifier (PA) is designed to demonstrate the capability of the proposed 1: 4 TLT, which is used as the output impedance transformer of the class-E PA. The maximum output power is 24.7 dBm at 2.6 GHz, where the power-added efficiency is 33.2% and the power gain is 13.2 dB under 3.6 V supply voltage. The class-E PA achieves broadband and flat output power of 24.6 +/- 0.2 dBm from 2.4 to 3.5 GHz.
    Appears in Collections:[電機工程學系] 期刊論文

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