Low Gate Leakage Current HFET Structure Fabricated by Using a Step-free Airbridge Gate Process

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51967

Title:	Low Gate Leakage Current HFET Structure Fabricated by Using a Step-free Airbridge Gate Process
Authors:	Chien,FT;Chan,CL;Wang,CL;Liao,CN;Tsai,YT;Chiu,HC
Contributors:	電機工程學系
Date:	2010
Issue Date:	2012-03-28 10:12:05 (UTC+8)
Publisher:	國立中央大學
Abstract:	Conventional heterostructure field-effect transistors (HFETs) have a high gate leakage current due to the gate electrode being in contact with the exposed channel layer and with the carrier-providing layer on the mesa sidewall. In this study, we use a new step-free (SF) air-bridge gate structure to reduce the gate leakage and improve the breakdown voltage. The proposed structure does not increase any MASKs as compared with the conventional process. In addition, this new structure promises a gate-source capacitance smaller than those of conventional heterostructure FET devices. Consequently, the high-frequency performance of the HFETs using the proposed structure can be improved.
Relation:	JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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