Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51968

Title:	Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
Authors:	Wang,SY;Chiang,PY;Chang,CM;Chen,SH;Chyi,JI
Contributors:	電機工程學系
Keywords:	DHBTS;BASE
Date:	2010
Issue Date:	2012-03-28 10:12:07 (UTC+8)
Publisher:	國立中央大學
Abstract:	The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density (K(SURF)) than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S(0) is deduced for the DHBT with a higher Sb content in the InGaAsSb base.
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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