Precise Ge quantum dot placement for quantum tunneling devices

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題名:	Precise Ge quantum dot placement for quantum tunneling devices
作者:	Chen,KH;Chien,CY;Li,PW
貢獻者:	電機工程學系
日期:	2010
上傳時間:	2012-03-28 10:12:25 (UTC+8)
出版者:	國立中央大學
摘要:	This study demonstrates the precise placement of Ge quantum dots (QDs) in an SiO(2) or Si(3)N(4) matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The effectiveness of this method is shown by a variety of geometries including nanotrenches, nanorods and polygonal nanocavities. Modulating the structural geometry and peripheral spacer materials effectively places a single Ge QD in the center of an oxidized SiGe nanostructure or individual QDs at the corners (edges). This study also reports the fabrication of Ge QD single-electron devices that exhibit clear Coulomb staircases and differential conductance oscillations at room temperature.
關聯:	NANOTECHNOLOGY
顯示於類別:	[電機工程學系] 期刊論文

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