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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51989

    Title: Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
    Authors: Lin,SY;Tseng,CC;Chung,TH;Liao,WH;Chen,SH;Chyi,JI
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:12:42 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML).
    Appears in Collections:[電機工程學系] 期刊論文

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