Stability Improvement of Organic Thin-Film Transistors Using Stacked Gate Dielectrics

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题名:	Stability Improvement of Organic Thin-Film Transistors Using Stacked Gate Dielectrics
作者:	Lo,PY;Li,PW;Chan,YJ
贡献者:	電機工程學系
关键词:	PERFORMANCE;DEPENDENCE;TFTS
日期:	2010
上传时间:	2012-03-28 10:12:47 (UTC+8)
出版者:	國立中央大學
摘要:	Poly-3-hexylthiophene organic thin-film transistors (OTFTs) were fabricated with different kinds of stacked gate dielectrics, which exhibit an individual effective trap behavior. The transistor fabricated with a stacked gate dielectric in a donor-like trap behavior exhibits a significant current hysteresis loop, a large threshold voltage shift, and subthreshold swing changes during operation in the dark and under illumination. The device performance is improved using a stacked gate dielectric with acceptor-like traps. The mechanisms of OTFTs with an acceptor-like trap dielectric and a donor-like dielectric are discussed.
關聯:	IEEE TRANSACTIONS ON ELECTRON DEVICES
显示于类别:	[電機工程學系] 期刊論文

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