English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69937/69937 (100%)
Visitors : 23202248      Online Users : 430
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52024

    Title: A Novel Self-Aligned Raised Source/Drain Polysilicon Thin-Film Transistor With a High-Current Structure
    Authors: Chien,FT;Chen,CW;Liao,CN;Lee,TC;Wang,CL;Cheng,CH;Chiu,HC;Tsai,YT
    Contributors: 電機工程學系
    Date: 2011
    Issue Date: 2012-03-28 10:13:33 (UTC+8)
    Publisher: 國立中央大學
    Abstract: In this letter, a high-current self-aligned raised source/drain polycrystalline silicon thin-film transistor (HCSARSD-TFT) is proposed and demonstrated for the first time. This new self-aligned device features two channels, i.e., a nitride spacer offset-gated structure and a raised source/drain (RSD) region, that reveal better device performance. Our experimental results show that the ON-current of the HCSARSD-TFT is about two times higher than that of the conventional structure, and the leakage current is considerably reduced simultaneously. In addition, since the gate and RSD areas of the proposed device are self-aligned, no extra mask is needed when comparing it with conventional coplanar RSD TFTs.
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明