A Novel Self-Aligned Raised Source/Drain Polysilicon Thin-Film Transistor With a High-Current Structure

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52024

Title:	A Novel Self-Aligned Raised Source/Drain Polysilicon Thin-Film Transistor With a High-Current Structure
Authors:	Chien,FT;Chen,CW;Liao,CN;Lee,TC;Wang,CL;Cheng,CH;Chiu,HC;Tsai,YT
Contributors:	電機工程學系
Keywords:	POLY-SI TFT;CHANNEL;GATE
Date:	2011
Issue Date:	2012-03-28 10:13:33 (UTC+8)
Publisher:	國立中央大學
Abstract:	In this letter, a high-current self-aligned raised source/drain polycrystalline silicon thin-film transistor (HCSARSD-TFT) is proposed and demonstrated for the first time. This new self-aligned device features two channels, i.e., a nitride spacer offset-gated structure and a raised source/drain (RSD) region, that reveal better device performance. Our experimental results show that the ON-current of the HCSARSD-TFT is about two times higher than that of the conventional structure, and the leakage current is considerably reduced simultaneously. In addition, since the gate and RSD areas of the proposed device are self-aligned, no extra mask is needed when comparing it with conventional coplanar RSD TFTs.
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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