Analysis of Carrier Transport in Trigate Si Nanowire MOSFETs

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题名:	Analysis of Carrier Transport in Trigate Si Nanowire MOSFETs
作者:	Lai,WT;Wu,CW;Lin,CC;Li,PW
贡献者:	電機工程學系
关键词:	FIELD-EFFECT TRANSISTORS;GATE SOI MOSFETS;COULOMB-BLOCKADE;SILICON;LAYER;VOLTAGE
日期:	2011
上传时间:	2012-03-28 10:13:48 (UTC+8)
出版者:	國立中央大學
摘要:	Trigate Si nanowire (NW) MOSFETs have been fabricated and characterized at temperature between 77 and 300 K in the dark and under light pumping. The NW width W and height H, the gate length L(g), and the gate oxide thickness t(ox), respectively, were 7-25, 16, 34-52, and 7 nm. The interesting aspects of Si NW MOSFETs with W/L(g) = 25 nm/52 nm, 24 nm/34 nm, 7 nm/47 nm, and 10 nm/37 nm measured at low drain voltage are that the drain current exhibited not only inverse temperature dependence in strong accumulation but also clear current plateaus/oscillations near the threshold regime at temperature up to 300 K. Notably, such current plateaus diminished or were invisible in the device of W/L(g) = 24 nm/42 nm. The observed current behaviors are inferred from the interplay of quantum interference and intersubband scattering effects. Additional current plateaus due to photogenerated excitons were also observed in the studied devices, evidencing photoexcitation effects on quantum transports through a Si NW.
關聯:	IEEE TRANSACTIONS ON ELECTRON DEVICES
显示于类别:	[電機工程學系] 期刊論文

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