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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52058


    Title: Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
    Authors: Hsu,WT;Liao,YA;Hsu,FC;Chiu,PC;Chyi,JI;Chang,WH
    Contributors: 電機工程學系
    Keywords: MU-M;CHEMICAL TRENDS;SEMICONDUCTORS;EMISSION
    Date: 2011
    Issue Date: 2012-03-28 10:14:23 (UTC+8)
    Publisher: 國立中央大學
    Abstract: The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624464]
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程學系] 期刊論文

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