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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52059


    Title: Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer
    Authors: Liu,HH;Chen,PR;Lee,GY;Chyi,JI
    Contributors: 電機工程學系
    Keywords: LIGHT-EMITTING-DIODES;WURTZITE ALN;GAN;SEMICONDUCTORS;PARAMETERS;INN
    Date: 2011
    Issue Date: 2012-03-28 10:14:25 (UTC+8)
    Publisher: 國立中央大學
    Abstract: This letter reports an InGaN light-emitting diode (LED) structure that has an n-type Al(0.1)Ga(0.9)N/GaN/In(0.06)Ga(0.94)N current spreading layer under its multiple-quantum-well active region. As indicated by simulation, the Al(0.1)Ga(0.9)N/GaN/In(0.06)Ga(0.94)N heterostructure induces a higher electron concentration than an n-AlGaN/GaN cladding layer and an n-GaN/InGaN current spreading layer that are used in conventional LEDs. As a result, the proposed n-type spreading layer is expected to alleviate current crowding and improve external quantum efficiency. Experimentally, the light output uniformity across the chips is greatly improved. The output power and wall-plug efficiency are enhanced by about 18.2% and 22.2% at an injection current of 350 mA for the LEDs employing the new double-heterostructure current spreading layer.
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程學系] 期刊論文

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