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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52064

    Title: Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors
    Authors: Lo,CF;Ren,F;Chang,CY;Pearton,SJ;Chen,SH;Chang,CM;Wang,SY;Chyi,JI;Kravchenko,II
    Contributors: 電機工程學系
    Date: 2011
    Issue Date: 2012-03-28 10:14:33 (UTC+8)
    Publisher: 國立中央大學
    Abstract: A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In(0.52)Al(0.48)As/In(0.42)Ga(0.58)As(0.77)Sb(0.23)/In(0.53)Ga(0.47)As double heterojunction bipolar transistors (DHBTs). Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm(2) and a high dc current gain of 123.8 for a DHBT with a 0.65 x 8.65 mu m(2) emitter area were obtained. A unity gain cutoff frequency (f(T)) of 260 GHz and a maximum oscillation frequency (f(max)) of 485 GHz at J(C) = 302 kA/cm(2) were achieved. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3589808]
    Appears in Collections:[電機工程學系] 期刊論文

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