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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52073


    Title: High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer
    Authors: Lee,GY;Liu,HH;Chyi,JI
    Contributors: 電機工程學系
    Keywords: BREAKDOWN VOLTAGE;SURFACE-STATES;GAN FILMS;RECTIFIERS;DISLOCATIONS
    Date: 2011
    Issue Date: 2012-03-28 10:14:46 (UTC+8)
    Publisher: 國立中央大學
    Abstract: High-performance AlGaN/GaN Schottky barrier diodes are fabricated on a composite AlGaN/AlN buffer layer with low screw-type and high edge-type dislocation densities. Without edge termination, the devices with 30-mu m anode-to-cathode spacing exhibit a high breakdown voltage (V(B)) of 3489 V, a low leakage current (I(R)) of less than 0.2 mu A at -2000 V, and a low specific on-resistance (R(on)) of 7.9 m Omega . cm(2), resulting in a figure of merit (V(B)(2)/R(on)) as high as 1.54 GW/cm(2). Their switching characteristics as revealed by the reverse-recovery transient waveform exhibit a short reverse-recovery time of 17 ns.
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程學系] 期刊論文

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