Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 期刊論文 > Item 987654321/52079

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/52079

题名:	Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique
作者:	Shi,JW;Kuo,FM;Lin,CW;Chen,W;Yan,LJ;Sheu,JK
贡献者:	電機工程學系
日期:	2011
上传时间:	2012-03-28 10:14:55 (UTC+8)
出版者:	國立中央大學
摘要:	The mechanism responsible for the efficiency droop in AlGaInP-based vertically structured red light-emitting diodes (LEDs) is investigated using dynamic measurement techniques. Short electrical pulses (similar to 100 ps) are pumped into this device and the output optical pulses probed using high-speed photoreceiver circuits. From this, the internal carrier dynamic inside the device can be investigated by use of the measured electrical-to-optical (E-O) impulse responses. Results show that the E-O responses measured under different bias currents are all invariant from room temperature to similar to 100 degrees C. This is contrary to most results reported for AlGaInP-based red LEDs, which usually exhibit a shortening in the response time and degradation in output power with the increase of ambient temperature. According to the extracted fall-time constants of the E-O impulse responses, the origin of the efficiency droop in our vertical LED structure, which has good heat-sinking, is not due to thermally induced carrier leakage, but rather should be attributed to defect recombination and the saturation of defect/spontaneous recombination processes under low and high bias current, respectively.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[電機工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	450	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....