Low Output-Conductance InAs-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiO(2) Gate Dielectrics

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题名:	Low Output-Conductance InAs-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiO(2) Gate Dielectrics
作者:	Ho,HC;Fan,TW;Lin,HK
贡献者:	電機工程學系
关键词:	TRANSPORT;HEMTS;GAAS
日期:	2011
上传时间:	2012-03-28 10:15:00 (UTC+8)
出版者:	國立中央大學
摘要:	This study reports the development of InAs-channel MOSFETs using PECVD-deposited SiO(2) gate dielectrics. Arsenic capping and desorption are applied to as-grown wafers to prevent the formation of native oxides before the gate dielectrics are then deposited. We believe that increased hole confinement in a layer structure effectively suppresses the impact ionization effect, and an output conductance as 18 mS/mm at a drain bias of 2 V is demonstrated. A 2 mu m-gate-length device exhibits dc performances of I(DSS) = 154 mA/mm and g(m) = 189 mS/mm, and rf performances of f(T) = 14.5 GHz and f(MAX) = 24 GHz. The InAs-channel MOS-FET has potential for application in high frequency circuit devices. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594098] All rights reserved.
關聯:	ELECTROCHEMICAL AND SOLID STATE LETTERS
显示于类别:	[電機工程學系] 期刊論文

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