Nanoscale, catalytically enhanced local oxidation of silicon-containing layers by 'burrowing' Ge quantum dots

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/52086

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52086

Title:	Nanoscale, catalytically enhanced local oxidation of silicon-containing layers by 'burrowing' Ge quantum dots
Authors:	Chien,CY;Chang,YJ;Chen,KH;Lai,WT;George,T;Scherer,A;Li,PW
Contributors:	電機工程學系
Keywords:	CONFINEMENT;GERMANIUM;SIGE
Date:	2011
Issue Date:	2012-03-28 10:15:06 (UTC+8)
Publisher:	國立中央大學
Abstract:	A new phenomenon of highly localized, nanoscale oxidation of silicon-containing layers has been observed. The localized oxidation enhancement observed in both Si and Si(3)N(4) layers appears to be catalyzed by the migration of Ge quantum dots (QDs). The sizes, morphology, and distribution of the Ge QDs are influenced by the oxidation of the Si-bearing layers. A two-step mechanism of dissolution of Si within the Ge QDs prior to oxidation is proposed.
Relation:	NANOTECHNOLOGY
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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